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Nitride-Based Type-II InGaN-(In)GaNAs 'W' Quantum Well Gain Media for Solid State Lighting Applications

SUMMARY Lehigh University has developed a new device concept and method to achieve high-performance and high efficiency Group III-Nitride LEDs and laser diodes emitting in the visible regime. LEDs and lasers based on conventional technology (InGaN quantum wells) suffer from poor performances due to low optical gain resulting in high current operation...

Published: 8/2/2021 | Inventor(s): Nelson Tansu, Ronald Arif, Yik-Khoon Ee

Keywords(s): Diagnostic Devices/Treatments, Light Emitting Diodes, Tunable Lasers

Category(s): Electronics