SUMMARY
High-efficiency InGaN based quantum wells (QWs) light-emitting diodes (LEDs) and laser diodes (LDs) play an important role in solid state lighting and display applications. However, it is still challenging to achieve high-efficiency InGaN QWs LEDs and LDs emitting in the deep green and yellow regimes. This is due to the increase of the electrostatic fields in InGaN QW leading to the reduction of the electron-hole wave functions overlap and high threading dislocation density and phase separation in high In-content InGaN QW resulting poor material quality and high nonradiative recombination.
Lehigh University proposes a new method to achieve enhancement of the electron-hole wave functions overlap and emission wavelength red-shift by inserting an InN delta (d)-layer inside the InGaN QW, to form a 3-layer staggered InGaN / delta-InN QW structure. By inserting the narrow band gap InN delta-layer in the InGaN QW, the electron and hole wave functions are pulled toward the center of the InGaN QW, the electron-hole wave functions overlap is significantly enhanced. In addition, the large band offset between the InN delta-layer and the InGaN QW extends the emission wavelength.
Lehigh Tech ID# 072709-02
THE MARKET
The SSL market is predicted to reach $33 billion by 2013, growing annually at over 10%. This market is an umbrella market for LEDs, OLEDs, and PLEDs. LED technologies make up a majority of this market ($5.08 billion), with a growth rate of over 24%. Additionally, 22% of the United States electricity is consumed by lighting, which costs consumers over $50 billion each year. SSL technologies have the potential to reduce this consumption by up to six times less. This potential has led to increased market need, funding resources and science centers dedicated to SSL developments, such as the $46 million Energy Frontier Research Center (EFRC) for solid-state lighting science funded by the Department of Energy.
THE OPPORTUNITY
Lehigh University is interested in identifying an industry partner to license this technology.
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SUMMARY
High-efficiency InGaN based quantum wells (QWs) light-emitting diodes (LEDs) and laser diodes (LDs) play an important role in solid state lighting and display applications. However, it is still challenging to achieve high-efficiency InGaN QWs LEDs and LDs emitting in the deep green and yellow regimes. This is due to the increase of the electrostatic fields in InGaN QW leading to the reduction of the electron-hole wave functions overlap and high threading dislocation density and phase separation in high In-content InGaN QW resulting poor material quality and high nonradiative recombination.
Lehigh University proposes a new method to achieve enhancement of the electron-hole wave functions overlap and emission wavelength red-shift by inserting an InN delta (d)-layer inside the InGaN QW, to form a 3-layer staggered InGaN / delta-InN QW structure. By inserting the narrow band gap InN delta-layer in the InGaN QW, the electron and hole wave functions are pulled toward the center of the InGaN QW, the electron-hole wave functions overlap is significantly enhanced. In addition, the large band offset between the InN delta-layer and the InGaN QW extends the emission wavelength.
Lehigh Tech ID# 072709-02
THE MARKET
The SSL market is predicted to reach $33 billion by 2013, growing annually at over 10%. This market is an umbrella market for LEDs, OLEDs, and PLEDs. LED technologies make up a majority of this market ($5.08 billion), with a growth rate of over 24%. Additionally, 22% of the United States electricity is consumed by lighting, which costs consumers over $50 billion each year. SSL technologies have the potential to reduce this consumption by up to six times less. This potential has led to increased market need, funding resources and science centers dedicated to SSL developments, such as the $46 million Energy Frontier Research Center (EFRC) for solid-state lighting science funded by the Department of Energy.
THE OPPORTUNITY
Lehigh University is interested in identifying an industry partner to license this technology.